SSD408 - N-Channel Enhancement Mode Power Mos.FET

SeCoS

📥 Download Datasheet

SSD408 Datasheet Preview — Preview of SSD408 PDF

Datasheet Details

Part number	SSD408
Manufacturer	SeCoS
File Size	424.68 KB
Description	N-Channel Enhancement Mode Power Mos.FET
Datasheet	SSD408-SeCoS.pdf

SSD408 Product details

Description

TO-252 The SSD408 uses advanced trench technology to provide excellent on-resistance and low gate charge.The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in PWM applications.

Features

Simple Drive Requirement.
Lower On-resistance.
Fast Switching Characteristic D REF. A B C D E F S G S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol.

📁 SSD408 Similar Datasheet

SSD-C01G-3xx - CF RoHS (SiliconSystems)
SSD-C01G-5xx - CF RoHS (SiliconSystems)
SSD-C01G-6xx - CF RoHS (SiliconSystems)
SSD-C02G-3xx - CF RoHS (SiliconSystems)
SSD-C02G-5xx - CF RoHS (SiliconSystems)
SSD-C02G-6xx - CF RoHS (SiliconSystems)
SSD-C04G-3xx - CF RoHS (SiliconSystems)
SSD-C04G-5xx - CF RoHS (SiliconSystems)

Other Datasheets by SeCoS

SSD40N03 - N-Channel Enhancement Mode PowerMos.FET
SSD40N04-20D - N-Ch Enhancement Mode Power MOSFET
SSD40N10-30D - N-Ch Enhancement Mode Power MOSFET
SSD40P04-20D - P-Ch Enhancement Mode Power MOSFET
SSD40P04-20DE - P-Ch Enhancement Mode Power MOSFET
SSD40P04J - P-Channel MOSFET

Published: Sep 18, 2014 |