* High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability APPLICATIONS Power switching applications Hard switched and hig
SSD40P04J Datasheet (307.61 KB)
SSD40P04J
SeCoS
307.61 KB
P-channel mosfet.
Elektronische Bauelemente
SSD40P04J
-40A, -40V, RDS(ON) 14 mΩ P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies h.
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