SSG5509A Datasheet - SeCoS

SSG5509A, N & P-Ch Enhancement Mode Power MOSFET

SSG5509A Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ RoHS Co.
The SSG5509A uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device.

Features

* Lower Gate Charge RoHS Compliant H G A C N J K F E MARKING CODE REF. Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. 5509ASS = Date Code PACKAGE INFORMATION

SSG5509A-SeCoS.pdf