SSG5N06-C N-Channel Enhancement Mode Power MosFET

SeCoS

Description

Elektronische Bauelemente SSG5N06-C 5A, 60V, RDS(ON) 45mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies .
The SSG5N06-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most.

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Datasheet Specifications

Part number: SSG5N06-C
Manufacturer: SeCoS
File Size: 683.66 KB
Datasheet: SSG5N06-C-SeCoS.pdf
Description: N-Channel Enhancement Mode Power MosFET

Features

* Advanced High Cell Density Trench Technology
* Super Low Gate Charge
* Green Device Available MARKING 5N06   = Date code PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13 inch SOP-8 B LD M A H G C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.79 6.20

SSG5N06-C Distributors

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SSG5N06-C N-Channel Enhancement Mode Power MosFET SeCoS

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