SSG5N06-C Datasheet (SeCoS) - N-Channel Enhancement Mode Power MosFET

SSG5N06-C, N-Channel Enhancement Mode Power MosFET

The SSG5N06-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SSG5N06-C meet the RoHS and Green Product requirement with full function reliability approved.

FEA

SSG5N06-C Features

* Advanced High Cell Density Trench Technology

* Super Low Gate Charge

* Green Device Available MARKING 5N06   = Date code PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13 inch SOP-8 B LD M A H G C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.79 6.20