SSG9973 - N-channel MOSFET

SeCoS

Datasheet Details

The SSG9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Simple drive requirement.
Low gate charge D1 8 D1 7 D2 6 D2 5 D1 0 o 8 o 1.35 1.75 Dimensions in millimeters D2 Date Code 9973SS G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1.2 3 3 Symbol VDS VGS ID@TA=25к ID@TA=70к IDM PD@TA=25к Ratings 60 ±20 3.9 2.5 20 2.0 0.016 Unit V V A A A W W /e C e C Total Power Dissipatio.

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Published: Aug 9, 2013 |