Download SSG9926J-C Datasheet PDF
SeCoS Halbleitertechnologie GmbH
SSG9926J-C
SSG9926J-C is Dual N-Channel Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
Elektronische Bauelemente 4.8A, 20V, RDS(ON) 30mΩ Dual-N Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SSG9926J-C provides the designers with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features Advanced Trench Processing Technology High Density Cell Design for Ultra Low On-Resistance High Power and Current Handing Capability MARKING .Q9926 = Date Code PACKAGE INFORMATION Package SOP-8 4K Leader Size 13 inch SOP-8 LD M A HG JK F REF. A B C D E F G Millimeter Min. Max. 5.79 6.20 4.70 5.11 3.80 4.00 0° 8° 0.40 1.27...