Datasheet4U Logo Datasheet4U.com

SSG9922E - N-channel MOSFET

General Description

The SSG9922E provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Optimal DC/DC Battery.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSG9926N N-Channel MOSFET SeCoS Halbleitertechnologie
SSG200EF60E 200 AMP N-CHANNEL IGBT Solid States Devices
SSG25C100 (SSG25C Series) Triac San Rex
SSG25C100 (SSG25C Series) Triac Sansha Electric
SSG25C120 (SSG25C Series) Triac San Rex

Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
SSG9926J-C Dual N-Channel Enhancement Mode Power MOSFET
SSG9960 N-channel MOSFET
SSG9962 N-channel MOSFET
SSG9971 N-channel MOSFET
SSG9971A Dual-N Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSG9922E 6.8A, 20V,RDS(ON) 20m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOP-8 Description The SSG9922E provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 6.20 5.80 0.25 0.40 0.90 0.19 0.25 45 o 0.375 REF 3.80 4.00 Features * Optimal DC/DC Battery Application * Low On-Resistance * Capable Of 2.5V Gate Drive D1 8 D1 7 D2 6 D2 5 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 0 o 8 o 1.35 1.75 Dimensions in millimeters D1 D2 9922ESS Date Code G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VG S@4.