SSG9922E
SSG9922E is N-channel MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
6.8A, 20V,RDS(ON) 20m£[ Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS pliant Product
A suffix of "-C" specifies halogen & lead-free
SOP-8
Description
The SSG9922E provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
6.20 5.80 0.25 0.40 0.90 0.19 0.25
45 o
0.375 REF
3.80 4.00
Features
- Optimal DC/DC Battery Application
- Low On-Resistance
- Capable Of 2.5V Gate Drive
D1 8 D1 7 D2 6 D2 5
0.35 0.49
1.27Typ. 4.80 5.00 0.100.25
0 o 8 o
1.35 1.75
Dimensions in millimeters
D1
D2
9922ESS
Date Code
G1
G2
1 S1
2 G1
3...
