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SSG9926J-C - Dual N-Channel Enhancement Mode Power MOSFET

General Description

SSG9926J-C provides the designers with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Key Features

  • Advanced Trench Processing Technology High Density Cell Design for Ultra Low On-Resistance High Power and Current Handing Capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSG9926J-C 4.8A, 20V, RDS(ON) 30mΩ Dual-N Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SSG9926J-C provides the designers with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. FEATURES Advanced Trench Processing Technology High Density Cell Design for Ultra Low On-Resistance High Power and Current Handing Capability MARKING .Q9926 = Date Code PACKAGE INFORMATION Package MPQ SOP-8 4K Leader Size 13 inch SOP-8 B LD M A HG C JK F N E REF. A B C D E F G Millimeter Min. Max. 5.79 6.20 4.70 5.11 3.80 4.00 0° 8° 0.40 1.27 0.10 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.33 0.51 0.375 REF. 45°REF. 1.3 1.752 0 0.