SSM3055 - N-channel enhancement mode power MOSFET

SeCoS

Datasheet Details

Part number	SSM3055
Manufacturer	SeCoS
File Size	564.35 KB
Description	N-channel enhancement mode power MOSFET
Datasheet	SSM3055-SeCoS.pdf

The SSM3055 Provide the designer with the best Combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Dynamic dv/dt Rating.
Simple Drive Requirement.
Repetitive Avalanche Rated.
Fast Switching D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID@TA=25к ID@TA=75к IDM PD@TA=25к T.

📁 SSM3055 Similar Datasheet

SSM3055L - N-Channel MOSFET (SeCoS Halbleitertechnologie)
SSM3060VHE - ULTRA LOW VF SCHOTTKY RECTIFIER (PAN JIT)
SSM3302 - 2 x 10 W Filterless Class-D Stereo Audio Amplifier (Analog Devices)
SSM3310GH - P-CHANNEL ENHANCEMENT MODE POWER MOSFET (Silicon Standard)
SSM3310GJ - P-CHANNEL ENHANCEMENT MODE POWER MOSFET (Silicon Standard)
SSM3515 - Class-D Digital Input Audio Amplifier (Analog Devices)
SSM3582 - Filterless Stereo Class-D Audio Amplifier (Analog Devices)
SSM3H137TU - Silicon N-Channel MOSFET (Toshiba)

Other Datasheets by SeCoS

Published: Jun 25, 2019 |