SSM3H137TU - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) AEC-Q101 (Rev. D) qualified. (Note 1) (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 295 mΩ (max) (@VGS = 4.0 V, ID = 0.5 A) RDS(ON) = 280 mΩ (max) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 240 mΩ (max) (@VGS = 10 V, ID = 1.0 A) Note 1: For detail information, Please contact to our sales. 3. Packaging and Pin Assignment SSM3H137TU UFM 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-03 2016-03-25 Rev.1.0 SSM3H137TU 4.

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Published: Jun 25, 2019 |