Datasheet4U Logo Datasheet4U.com

SSM3H137TU Datasheet - Toshiba

SSM3H137TU Silicon N-Channel MOSFET

SSM3H137TU Features

* (1) AEC-Q101 (Rev. D) qualified. (Note 1) (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 295 mΩ (max) (@VGS = 4.0 V, ID = 0.5 A) RDS(ON) = 280 mΩ (max) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 240 mΩ (max) (@VGS = 10 V, ID = 1.0 A) Note 1: For detail information, Please con

SSM3H137TU-Toshiba.pdf

Preview of SSM3H137TU PDF
SSM3H137TU Datasheet Preview Page 2 SSM3H137TU Datasheet Preview Page 3

Datasheet Details

Part number:

SSM3H137TU

Manufacturer:

Toshiba ↗

File Size:

225.11 KB

Description:

Silicon n-channel mosfet.

📁 Related Datasheet

SSM3055 N-channel enhancement mode power MOSFET (SeCoS)

SSM3055L N-Channel MOSFET (SeCoS Halbleitertechnologie)

SSM3060VHE ULTRA LOW VF SCHOTTKY RECTIFIER (PAN JIT)

SSM3110-C N-Channel Enhancement Mode Power MOSFET (SeCoS)

SSM3302 2 x 10 W Filterless Class-D Stereo Audio Amplifier (Analog Devices)

SSM3310GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET (Silicon Standard)

SSM3310GJ P-CHANNEL ENHANCEMENT MODE POWER MOSFET (Silicon Standard)

SSM3515 Class-D Digital Input Audio Amplifier (Analog Devices)

TAGS

SSM3H137TU SSM3H137TU Silicon N-Channel MOSFET Toshiba

SSM3H137TU Distributor