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SSM3H137TU Datasheet - Toshiba

Silicon N-Channel MOSFET

SSM3H137TU Features

* (1) AEC-Q101 (Rev. D) qualified. (Note 1) (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 295 mΩ (max) (@VGS = 4.0 V, ID = 0.5 A) RDS(ON) = 280 mΩ (max) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 240 mΩ (max) (@VGS = 10 V, ID = 1.0 A) Note 1: For detail information, Please con

SSM3H137TU Datasheet (225.11 KB)

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Datasheet Details

Part number:

SSM3H137TU

Manufacturer:

Toshiba ↗

File Size:

225.11 KB

Description:

Silicon n-channel mosfet.

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SSM3H137TU Silicon N-Channel MOSFET Toshiba

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