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SSM3J133TU
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J133TU
○ Power Management Switch Applications
• 1.5V drive • Low ON-resistance: RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 29.8 mΩ (max) (@VGS = -4.5 V)
Unit: mm 2.1±0.1 1.7±0.1
1
0.3-+00..015
2.0±0.1 0.65±0.05
Absolute Maximum Ratings (Ta = 25°C)
2
3
Characteristics
Symbol
Rating
Unit
0.166±0.05
Drain-source voltage
VDSS
-20
V
0.7±0.05
Gate-source voltage
VGSS
±8
V
Drain current
DC
ID (Note1)
-5.5
A
Pulse
IDP (Note1)
-11.
SSM3J133TU Datasheet
