SSM3J133TU Datasheet (Toshiba) - Silicon P-Channel MOSFET

SSM3J133TU, Silicon P-Channel MOSFET

SSM3J133TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J133TU ○ Power Management Switch Applications 1.5V drive Low ON-resistance: RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 29.8 mΩ (max) (@VGS = -4.5 V) Unit: mm 2.1±0.1 1.7±0.1 1 0.3-+00..015 2.0±0.1 0.65±0.05 Absolute Maximum Ratings (Ta = 25°C) 2 3 Characteristics Symbol Rating Unit 0.166±0.05 Dra