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SSM3J134TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J134TU
○ Power Management Switch Applications
• 1.5 V drive • Low ON-resistance: RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
VDSS
-20
V
Gate-Source voltage
VGSS
±8
V
Drain current
DC
ID (Note 1)
-3.2
A
Pulse
IDP (Note 1)
-6.4
Power dissipation
PD (Note 2)
500
mW
t < 1s
1000
Channel temperature Storage temperature range
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g.
SSM3J134TU Datasheet
