The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SSM3J135TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J135TU
○ Power Management Switch Applications
• 1.5 V drive • Low ON-resistance: RDS(ON) = 260 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 180 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 132 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
DC Pulse
Power dissipation
Channel temperature Storage temperature range
Symbol
Rating
Unit
VDSS
-20
V
VGSS
±8
V
ID (Note 1)
-3.0
A
IDP (Note 1)
-6.0
PD (Note 2)
500
mW
t < 1s
1000
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g.
SSM3J135TU Datasheet
