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SSM3J135TU - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) = -20 V.
  • ID = -3.0 A.
  • 1.5 V drive.
  • Low ON-resistance: RDS(ON) = 260 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 180 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 132 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V) 3 TraMnOsiSsFtoErsT 1.Gate 2.Source 3.Drain 1 2.
  • Absolute Maximum Ratings (Ta = 25℃) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction Temperature Storage Temperature Range S.

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SMD Type P-Channel MOSFET SSM3J135TU ■ Features ● VDS (V) = -20 V ● ID = -3.0 A ● 1.5 V drive ● Low ON-resistance: RDS(ON) = 260 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 180 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 132 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V) 3 TraMnOsiSsFtoErsT 1.Gate 2.Source 3.Drain 1 2 ■ Absolute Maximum Ratings (Ta = 25℃) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction Temperature Storage Temperature Range Symbol Rating Unit VDS -20 V VGS ±8 ID (Note 1) -3.0 A IDP (Note 1) -6.0 PD (Note 2) PD (t < 1s) 500 mW 1000 TJ 150 ℃ Tstg -55 to 150 Note 1: The channel temperature should not exceed 150°C during use. Note 2: Mounted on FR4 board. (25.4 mm × 25.