Datasheet4U Logo Datasheet4U.com

SSM3J132TU - Silicon P-Channel MOSFET

Key Features

  • (1) 1.2-V drive (2) Low drain-source on-resistance : RDS(ON) = 94 mΩ (max) (VGS = -1.2 V) RDS(ON) = 39 mΩ (max) (VGS = -1.5 V) RDS(ON) = 29 mΩ (max) (VGS = -1.8 V) RDS(ON) = 21 mΩ (max) (VGS = -2.5 V) RDS(ON) = 17 mΩ (max) (VGS = -4.5 V) 3. Packaging and Internal Circuit UFM SSM3J132TU 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2011-02 2021-10-22 Rev.1.0 SSM3J132TU 4. Absolute Maximum Ratings (Note) (Unless otherwise.

📥 Download Datasheet

Datasheet Details

Part number SSM3J132TU
Manufacturer Toshiba
File Size 447.65 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM3J132TU Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSM3J130TU Silicon P-Channel MOSFET Toshiba
SSM3J133TU Silicon P-Channel MOSFET Toshiba
SSM3J134TU Silicon P-Channel MOSFET Toshiba
SSM3J135TU Silicon P-Channel MOSFET Toshiba
SSM3J140TU Silicon P-Channel MOSFET Toshiba

Other Datasheets by Toshiba

Part Number Description
SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM3J108TU Field Effect Transistor Silicon P-Channel MOS Type
SSM3J109TU Silicon P-Channel MOSFET
SSM3J110TU Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J111TU Field-Effect Transistor Silicon P-Channel MOS Type

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J132TU 1. Applications • Power Management Switches 2. Features (1) 1.2-V drive (2) Low drain-source on-resistance : RDS(ON) = 94 mΩ (max) (VGS = -1.2 V) RDS(ON) = 39 mΩ (max) (VGS = -1.5 V) RDS(ON) = 29 mΩ (max) (VGS = -1.8 V) RDS(ON) = 21 mΩ (max) (VGS = -2.5 V) RDS(ON) = 17 mΩ (max) (VGS = -4.5 V) 3. Packaging and Internal Circuit UFM SSM3J132TU 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2011-02 2021-10-22 Rev.1.0 SSM3J132TU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -12 V VGSS ±6 V Drain current (DC) (Note 1) ID -5.