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SSM3J13T
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM3J13T
Power Management Switch High Speed Switching Applications
· · · Small Package Low on Resistance : Ron = 70 mΩ (max) (@VGS = −4 V) : Ron = 95 mΩ (max) (@VGS = −2.5 V) Low Gate Threshold Voltage Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage DC Drain current Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) Tch Tstg Rating -12 ±8 -3.0 -6.0 1.25 150 -55~150 A Unit V V
Drain power dissipation Channel temperature Storage temperature range
W °C °C
JEDEC JEITA TOSHIBA
― ― 2-3S1A
Note 1: Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm , t = 10 s) Note 2: The pulse width limited by max channel temperature.
2
Weight: 10 mg (typ.
SSM3J13T Datasheet
