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SSM3J111TU
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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J111TU
High Speed Switching Applications
• • 2.5V drive Low on-resistance: Ron = 480mΩ (max) (@VGS = −4 V)
0.65±0.05 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 3 0.166±0.05
Unit: mm
Ron = 680mΩ (max) (@VGS = −2.5 V)
2.0±0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating −20 ± 12 −1 −2 800 500 150 −55~150 Unit V V A mW °C °C
1 2
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM3J111TU Datasheet
