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SSM3J113TU
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J113TU
High Speed Switching Applications
• 2.0V drive • Low on-resistance: Ron = 449mΩ (max) (@VGS = −2.0 V)
Ron = 249mΩ (max) (@VGS = −2.5 V) Ron = 169mΩ (max) (@VGS = −4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage Gate-Source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature Storage temperature range
VDS
−20
V
VGSS
± 12
V
ID
−1.7 A
IDP
−3.4
PD (Note 1)
800
mW
PD (Note 2)
500
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM3J113TU Datasheet
