SSM3J114TU Description
SSM3J114TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J114TU ○ High-Speed Switching Applications ○ Power Management Switch Applications Unit: Drain Drain power dissipation Channel temperature Storage temperature PD (Note 1) 800 mW PD (Note 2) 500 UFM Tch 150 °C JEDEC ― Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.g.