Field-Effect Transistor Silicon P-Channel MOS Type
Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SSM3J114TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J114TU
○ High-Speed Switching Applications ○ Power Management Switch Applications
Unit: mm
0.3-+00..015
• 1.5 V drive • Low on-resistance
Ron = 526 mΩ (max) (@ VGS = -1.5 V) Ron = 321 mΩ (max) (@ VGS = -1.8 V) Ron = 199 mΩ (max) (@ VGS = -2.5 V) Ron = 149 mΩ (max) (@ VGS = -4.0 V)
2.0±0.1 0.65±0.05
2.1±0.1 1.7±0.1
1
2
3
0.166±0.05
Absolute Maximum Ratings (Ta = 25°C)
0.7±0.05
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
-20
V
Gate-Source voltage
VGSS
±8
V
Drain current
DC
ID
Pulse
IDP
-1.8 A
-3.6
1. Gate 2. Source 3.
SSM3J114TU Datasheet
