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SSM3J115TU
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TOSHIBA Field-Effect Transistor
Silicon P-Channel MOS Type
SSM3J115TU
High-Speed Switching Applications Power Management Switch Applications
• • 1.5 V drive Low ON-resistance: Ron = 353 mΩ (max) (@VGS = −1.5 V) Ron = 193 mΩ (max) (@VGS = −1.8 V) Ron = 125 mΩ (max) (@VGS = −2.5 V) Ron = 98 mΩ (max) (@VGS = −4.0 V)
2.0±0.1 2.1±0.1 1.7±0.1 0.65±0.05 +0.1 0.3 -0.05 3 0.166±0.05
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating −20 ±8 −2.2 −4.4 800 500 150 −55~150 Unit V V
1 2
mW °C °C
Using continuously under heavy loads (e.g.
SSM3J115TU Datasheet
