Field-Effect Transistor Silicon P-Channel MOS Type
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SSM3J110TU
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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J110TU
High Speed Switching Applications
• • 1.8V drive Low on-resistance: Ron = 240mΩ (max) (@VGS = −1.8 V) Ron = 145mΩ (max) (@VGS = −2.5 V) Ron = 94mΩ (max) (@VGS = −4.0 V)
0.65±0.05 2.0±0.1 1 2 3 0.166±0.05 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating −12 ±8 −2.3 −4.6 800 500 150 −55~150 Unit V V
mW °C °C
0.7±0.05
A
Using continuously under heavy loads (e.g.
SSM3J110TU Datasheet
