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SSM3J112TU
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J112TU
High Speed Switching Applications
• 4V drive • Low on-resistance: Ron = 790mΩ (max) (@VGS = −4 V)
Ron = 390mΩ (max) (@VGS = −10 V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm 2.1±0.1 1.7±0.1
0.3-+00..015
2.0±0.1 0.65±0.05
0.166±0.05
Characteristic
Symbol
Rating
Unit
Drain-Source voltage Gate-Source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature Storage temperature range
VDS
−30
V
VGSS
± 20
V
ID
−1.1 A
IDP
−2.2
PD (Note 1)
800
mW
PD (Note 2)
500
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM3J112TU Datasheet
