SSM3J112TU Overview
SSM3J112TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J112TU High Speed Switching Applications 4V drive Low on-resistance: Ron = 790mΩ (max) (@VGS = −4 V) Ron = 390mΩ (max) (@VGS = −10 V) Ratings (Ta = 25°C) Unit: Using continuously under heavy loads (e.g.