SSM3J135TU Datasheet

The SSM3J135TU is a Silicon P-Channel MOSFET.

Datasheet4U Logo
Part NumberSSM3J135TU
ManufacturerToshiba
Overview SSM3J135TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J135TU ○ Power Management Switch Applications • 1.5 V drive • Low ON-resistance: RDS(ON) = 260 mΩ (max) (@VGS = -1.5. absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channe.
Part NumberSSM3J135TU
DescriptionP-Channel MOSFET
ManufacturerKexin Semiconductor
Overview SMD Type P-Channel MOSFET SSM3J135TU ■ Features ● VDS (V) = -20 V ● ID = -3.0 A ● 1.5 V drive ● Low ON-resistance: RDS(ON) = 260 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 180 mΩ (max) (@VGS = -1.8 V) RDS(O.
* VDS (V) = -20 V
* ID = -3.0 A
* 1.5 V drive
* Low ON-resistance: RDS(ON) = 260 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 180 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 132 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V) 3 TraMnOsiSsFtoErsT 1.Gate 2.Source 3.Drain 1 2
* Absolute Maximum Rating.