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SSM3J130TU - Silicon P-Channel MOSFET

SSM3J130TU Description

SSM3J130TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J130TU ○ Power Management Switch Applications * 1.5 V dr.

SSM3J130TU Applications

* 1.5 V drive
* Low ON-resistance:RDS(ON) = 63.2 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 41.1 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 31.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 25.8 mΩ (max) (@VGS = -4.5 V) Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 2.0±0.1 0.65±0.05 0.166±0.05 Absolute Maximum R

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Silicon P-Channel MOSFET Toshiba
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