SSM3J109TU Datasheet (Toshiba Semiconductor)

SSM3J109TU, Silicon P-Channel MOSFET

SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 300 mΩ (max) (@VGS = -1.8 V) Ron = 172 mΩ (max) (@VGS = -2.5 V) Ron = 130 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID Pulse IDP -2 A -