SSM3J109TU Datasheet - Toshiba Semiconductor

SSM3J109TU Silicon P-Channel MOSFET

SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 300 mΩ (max) (@VGS = -1.8 V) Ron = 172 mΩ (max) (@VGS = -2.5 V) Ron = 130 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID Pulse IDP -2 A -.

SSM3J109TU_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM3J109TU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

229.12 KB

Description:

Silicon p-channel mosfet.

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