SSM3J134TU Datasheet (Toshiba) - Silicon P-Channel MOSFET

SSM3J134TU, Silicon P-Channel MOSFET

SSM3J134TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J134TU ○ Power Management Switch Applications 1.5 V drive Low ON-resistance: RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -20 V Gate-Source voltage VGSS ±8 V Drain