SSM3J13T Datasheet (Toshiba Semiconductor) - TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

SSM3J13T, TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J13T Power Management Switch High Speed Switching Applications Small Package Low on Resistance : Ron = 70 mΩ (max) (@VGS = 4 V) : Ron = 95 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage DC Drain current Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) Tch Tstg Rating -12 ±8 -3.0 -