SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

Toshiba Semiconductor

Description

SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J13T Power Management Switch High Speed Switching Applications .

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Datasheet Specifications

Part number: SSM3J13T
Manufacturer: Toshiba ↗ Semiconductor
File Size: 182.32 KB
Datasheet: SSM3J13T_ToshibaSemiconductor.pdf
Description: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

Applications

* Small Package Low on Resistance : Ron = 70 mΩ (max) (@VGS =
* 4 V) : Ron = 95 mΩ (max) (@VGS =
* 2.5 V) Low Gate Threshold Voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage DC Drain current Pulse Symbol VDS VGSS ID

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SSM3J13T TOSHIBA Field Effect Transistor Silicon Channel MOS Type U-MOSII Toshiba Semiconductor

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