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SSM3J13T Datasheet - Toshiba Semiconductor

SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J13T Power Management Switch High Speed Switching Applications Small Package Low on Resistance : Ron = 70 mΩ (max) (@VGS = 4 V) : Ron = 95 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage DC Drain current Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) Tch Tstg Rating -12 ±8 -3.0 -.

SSM3J13T_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM3J13T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

182.32 KB

Description:

Toshiba field effect transistor silicon p channel mos type (u-mosii).

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SSM3J13T SSM3J13T TOSHIBA Field Effect Transistor Silicon Channel MOS Type U-MOSII Toshiba Semiconductor