SSM3J112TU Datasheet - Toshiba Semiconductor

SSM3J112TU Silicon P-Channel MOSFET

SSM3J112TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J112TU High Speed Switching Applications 4V drive Low on-resistance: Ron = 790mΩ (max) (@VGS = 4 V) Ron = 390mΩ (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 2.0±0.1 0.65±0.05 0.166±0.05 Characteristic Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel tempera.

SSM3J112TU Datasheet (148.09 KB)

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Datasheet Details

Part number:

SSM3J112TU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

148.09 KB

Description:

Silicon p-channel mosfet.

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SSM3J112TU Silicon P-Channel MOSFET Toshiba Semiconductor

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