Datasheet Details
- Part number
- SSM3J112TU
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 148.09 KB
- Datasheet
- SSM3J112TU_ToshibaSemiconductor.pdf
- Description
- Silicon P-Channel MOSFET
SSM3J112TU Description
SSM3J112TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J112TU High Speed Switching Applications * 4V drive * Low.
SSM3J112TU Applications
* 4V drive
* Low on-resistance: Ron = 790mΩ (max) (@VGS =
* 4 V)
Ron = 390mΩ (max) (@VGS =
* 10 V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm 2.1±0.1 1.7±0.1
0.3-+00..015
2.0±0.1 0.65±0.05
0.166±0.05
Characteristic
Symbol
Rating
Unit
Drain-Source voltage Ga
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