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SSM3J115TU Datasheet - Toshiba Semiconductor

SSM3J115TU Field-Effect Transistor Silicon P-Channel MOS Type

SSM3J115TU www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J115TU High-Speed Switching Applications Power Management Switch Applications 1.5 V drive Low ON-resistance: Ron = 353 mΩ (max) (@VGS = 1.5 V) Ron = 193 mΩ (max) (@VGS = 1.8 V) Ron = 125 mΩ (max) (@VGS = 2.5 V) Ron = 98 mΩ (max) (@VGS = 4.0 V) 2.0±0.1 2.1±0.1 1.7±0.1 0.65±0.05 +0.1 0.3 -0.05 3 0.166±0.05 Unit: mm Absolute Maximum Ratings (Ta =.

SSM3J115TU Features

* o liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01

SSM3J115TU_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM3J115TU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

173.05 KB

Description:

Field-effect transistor silicon p-channel mos type.

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