SSM3J113TU Silicon P-Channel MOSFET

Toshiba Semiconductor

Description

SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications * 2.0V drive * L.

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Datasheet Specifications

Part number: SSM3J113TU
Manufacturer: Toshiba ↗ Semiconductor
File Size: 167.98 KB
Datasheet: SSM3J113TU_ToshibaSemiconductor.pdf
Description: Silicon P-Channel MOSFET

Applications

* 2.0V drive
* Low on-resistance: Ron = 449mΩ (max) (@VGS =
* 2.0 V) Ron = 249mΩ (max) (@VGS =
* 2.5 V) Ron = 169mΩ (max) (@VGS =
* 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain c

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SSM3J113TU Silicon P-Channel MOSFET Toshiba Semiconductor

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