Datasheet Details
- Part number
- SSM3J113TU
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 167.98 KB
- Datasheet
- SSM3J113TU_ToshibaSemiconductor.pdf
- Description
- Silicon P-Channel MOSFET
SSM3J113TU Description
SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications * 2.0V drive * L.
SSM3J113TU Applications
* 2.0V drive
* Low on-resistance: Ron = 449mΩ (max) (@VGS =
* 2.0 V)
Ron = 249mΩ (max) (@VGS =
* 2.5 V) Ron = 169mΩ (max) (@VGS =
* 4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage Gate-Source voltage
Drain c
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