SSM3J113TU Datasheet - Toshiba Semiconductor

SSM3J113TU Silicon P-Channel MOSFET

SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications 2.0V drive Low on-resistance: Ron = 449mΩ (max) (@VGS = 2.0 V) Ron = 249mΩ (max) (@VGS = 2.5 V) Ron = 169mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature.

SSM3J113TU_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM3J113TU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

167.98 KB

Description:

Silicon p-channel mosfet.

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