SSM3J132TU - Silicon P-Channel MOSFET

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Toshiba Semiconductor

Part number	SSM3J132TU
Manufacturer	Toshiba Semiconductor
File Size	447.65 KB
Description	Silicon P-Channel MOSFET
Datasheet	SSM3J132TU Datasheet
Additional preview pages of the SSM3J132TU datasheet.

(1) 1.2-V drive (2) Low drain-source on-resistance : RDS(ON) = 94 mΩ (max) (VGS = -1.2 V) RDS(ON) = 39 mΩ (max) (VGS = -1.5 V) RDS(ON) = 29 mΩ (max) (VGS = -1.8 V) RDS(ON) = 21 mΩ (max) (VGS = -2.5 V) RDS(ON) = 17 mΩ (max) (VGS = -4.5 V) 3. Packaging and Internal Circuit UFM SSM3J132TU 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2011-02 2021-10-22 Rev.1.0 SSM3J132TU 4. Absolute Maximum Ratings (Note) (Unless otherwise.

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Published: Sep 12, 2014 |