Datasheet Details
- Part number
- SSQF02N60J
- Manufacturer
- SeCoS
- File Size
- 248.32 KB
- Datasheet
- SSQF02N60J-SeCoS.pdf
- Description
- N-Channel MOSFET
SSQF02N60J Description
Elektronische Bauelemente SSQF02N60J 2A, 600V, RDS(ON) 4.4⦠N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of ā-Cā specifies hal.
The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
SSQF02N60J Features
* Robust high voltage termination Specified avalanche energy Source-to-drain diode recovery time comparable to a discrete fast recovery diode Diode is characterized for the use in bridge circuits IDSS and VDS(ON) are specified at the elevated temperature
REF. A B C D E F G
Millimeter Min. Max. 14.80
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