SSQF02N60J N-Channel MOSFET

SeCoS

Description

Elektronische Bauelemente SSQF02N60J 2A, 600V, RDS(ON) 4.4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies hal.
The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

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Datasheet Specifications

Part number: SSQF02N60J
Manufacturer: SeCoS
File Size: 248.32 KB
Datasheet: SSQF02N60J-SeCoS.pdf
Description: N-Channel MOSFET

Features

* Robust high voltage termination Specified avalanche energy Source-to-drain diode recovery time comparable to a discrete fast recovery diode Diode is characterized for the use in bridge circuits IDSS and VDS(ON) are specified at the elevated temperature REF. A B C D E F G Millimeter Min. Max. 14.80

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SSQF02N60J N-Channel MOSFET SeCoS

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