SSQF02N60J - N-Channel MOSFET

SeCoS

SSQF02N60J Description

Elektronische Bauelemente SSQF02N60J 2A, 600V, RDS(ON) 4.4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies hal.
The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

SSQF02N60J Features

* Robust high voltage termination Specified avalanche energy Source-to-drain diode recovery time comparable to a discrete fast recovery diode Diode is characterized for the use in bridge circuits IDSS and VDS(ON) are specified at the elevated temperature REF. A B C D E F G Millimeter Min. Max. 14.80

📥 Download Datasheet

SSQF02N60J Datasheet Preview — Preview of SSQF02N60J PDF

Datasheet Details

Part number: SSQF02N60J
Manufacturer: SeCoS
File Size: 248.32 KB
Datasheet: SSQF02N60J-SeCoS.pdf
Description: N-Channel MOSFET

📁 Related Datasheet

SSQ-105-01-T-S - HEADER CONNECTOR (Samtec)
SSQ-121LHT - Slide Switches (Mitsumishi)
SSQ-121MHT - Slide Switches (Mitsumishi)
SSQ-121MVT - Slide Switches (Mitsumishi)
SSQ-122LHT - Slide Switches (Mitsumishi)
SSQ-122MHT - Slide Switches (Mitsumishi)
SSQ-122MVT - Slide Switches (Mitsumishi)
SSQ-131MHT - Slide Switches (Mitsumishi)

📌 All Tags

N-Channel MOSFET SeCoS

SeCoS SSQF02N60J-like datasheet

SSQF07N65J - N-Ch Enhancement Mode Power MOSFET
SSQF09N60H-C - N-Ch Super Junction Power MOSFET
SSQF10N60H-C - N-Channel Super Junction Power MOSFET
SSQF11N20-C - N-Ch Enhancement Mode Power MOSFET
SSQF12N65J - N-Ch Enhancement Mode Power MOSFET
SSQF48P03-C - P-Channel Enhancement Mode Power MOSFET