* Robust high voltage termination Specified avalanche energy Source-to-drain diode recovery time comparable to a discrete fast recovery diode Diode is characterized for the use in bridge circuits IDSS and VDS(ON) are specified at the elevated temperature REF. A B C D E F G Millimeter Min. Max. 14.80
SSQF02N60J Datasheet (248.32 KB)
SSQF02N60J
SeCoS
248.32 KB
N-channel mosfet.
Elektronische Bauelemente
SSQF02N60J
2A, 600V, RDS(ON) 4.4Ω N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies hal.
📁 Related Datasheet
SSQF07N65J N-Ch Enhancement Mode Power MOSFET (SeCoS)
SSQF09N60H-C N-Ch Super Junction Power MOSFET (SeCoS)
SSQF10N60H-C N-Channel Super Junction Power MOSFET (SeCoS)
SSQF11N20-C N-Ch Enhancement Mode Power MOSFET (SeCoS)
SSQF12N65J N-Ch Enhancement Mode Power MOSFET (SeCoS)
SSQF48P03-C P-Channel Enhancement Mode Power MOSFET (SeCoS)
SSQF50N10SV-C N-Channel Shielded Gate Trench Power MOSFET (SeCoS)
SSQF72N06SV-C N-Channel Shielded Gate Trench Power MOSFET (SeCoS)
SSQF84N04S-C N-Channel Shielded Gate Trench Power MOSFET (SeCoS)
SSQ-105-01-T-S HEADER CONNECTOR (Samtec)
