SST2603 - P-Channel MOSFET

SeCoS

Datasheet Details

The SST2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

Small package outline.
Simple drive requirement Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Drain Current 3 Pulsed Drain Current 1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range D G S Symbol VDS VGS ID@TA=25 oC ID@TA=70 oC IDM PD@TA=25 oC Tj, Tstg SOT-26 1.90REF 0.95REF 0.95REF 0.45 REF 2.60 3.00 1.2 REF 0.60 REF 1.40 1.80 0.30 0.55 2.70 0.10 Max 3.10 o 0 0.

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Published: Jul 2, 2009 |