SST2602 Datasheet - SeCoS

SST2602 N-Channel Enhancement Mode Power MosFET

0.37Ref. 0.20 0.60 Ref. 2.60 3.00 The SST2602 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The SST2602 is universally used for all commercial-industrial applications. 0.25 1.40 1.80 0.30 0.55 0.95 Ref. 2.70.

SST2602 Features

* Low On-Resistance

* Capable of 2.5V Gate Drive D Dimensions in millimeters D 6 D 5 S 4 Date Code 2602 G 1 D 2 D 3 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@4.5V Continuous Drain Current,VGS@4.5V Pulsed Drain Curren

SST2602 Datasheet (365.66 KB)