2N1613
Seme LAB
10.95 KB
Bipolar npn device.
2N1613
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0..
📁 Related Datasheet
2N1613 - NPN medium power transistor
(Philips)
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N1613 NPN medium power transistor
Product specification Supersedes data of September 1994 .
2N1613 - SWITCHES AND UNIVERSAL AMPLIFIERS
(STMicroelectronics)
2N1613 2N1711
SWITCHES AND UNIVERSAL AMPLIFIERS
DESCRIPTION The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal ca.
2N1613 - NPN Small Signal General Purpose Amplifiers
(Fairchild)
.
2N1613 - NPN LOW POWER SILICON TRANSISTOR
(Microsemi Corporation)
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/181 Devices 2N718A 2N1613 2N1613L Qualified Level JAN JANTX JANTXV
MAXIMU.
2N1613 - NPN Low Power Silicon Transistor
(VPT)
2N718A, 2N1613, 2N1613L
NPN Low Power Silicon Transistor
Features
• Available in JAN, JANTX and JANTXV per MIL-PRF-19500/181 • Available in TO-18 (2N7.
2N1613 - Silicon Planar Epitaxial Transistors
(Comset Semiconductor)
NPN 2N1613 – 2N1711
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector .
2N1613 - SILICON NPN TRANSISTOR
(Central Semiconductor)
2N1613
SILICON NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1613 is a silicon NPN epitaxial planar tr.
2N1613 - GENERAL PURPOSE TRANSISTOR
(Motorola)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
(RBE * 10 Ohms)
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Devi.
