Part number:
2N3110
Manufacturer:
Seme LAB
File Size:
37.08kb
Download:
Description:
Bipolar npn device.
PDF File Details
2N3110
Seme LAB
37.08kb
Bipolar npn device.
📁 Related Datasheet
2N3110 - NPN SILICON EPITAXIAL TRANSISTOR
(Micro Electronics)
..
.
2N3110 - General Purpose Amplifier
(Comset Semiconductor)
NPN 2N3108 – 2N3110 GENERAL PURPOSE AMPLIFIERS AND SWITCHES
C
The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. They are inte.
2N3110 - Small Signal Transistors
(Central)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICE.
2N3114 - Amplifier Transistor
(Motorola)
..
.
2N3114 - Small Signal Transistors
(Central)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICE.
2N3114 - NPN Transistor
(STMicroelectronics)
.
2N3114CSM - Bipolar NPN Device
(Seme LAB)
..
2N3114CSM
Dimensions in mm (inches).
0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012)
2.54 ± 0.13 (0.10 ± 0.005)
3
2
1
1.91 ± 0.
2N3114CSM - SILICON PLANAR EPITAXIAL NPN TRANSISTOR
(TT)
SILICON PLANAR EPITAXIAL NPN TRANSISTOR
2N3114CSM
• High Voltage • Hermetic Ceramic Surface Mount Package • Designed For Low Noise General Purpose Am.
2N3115 - NPN Transistor
(Motorola)
2N2958 (SILICON) 2N2959 2N3115 2N3116
NPN silicon annular Star transistors for high- speed switching and amplifier applications.
CASE 22
(TO·18)
2N.
2N3115 - Small Signal Transistors
(Central Semiconductor)
Small Signal Transistors TO-18 Case (Continued)
TYPE NO.
DESCRIPTION
BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V)
MIN MIN MIN MAX *ICES **ICEV.
