2N3468
Seme LAB
10.45kb
Bipolar pnp device.
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2N3460 - LOW-FREQUENCY / LOW NOISE JFET
(Motorola)
MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Gate-Source Voltage
Gate Current
@Total Device Dissipation T/^ = 25°C
Derate above 25°C Storage Temperature .
2N3460 - N-Channel JFET
(InterFET)
InterFET
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2N3458-59-60
2N3458, 2N3459, 2N3460 N-Channel JFET
Features
• InterFET N0016H Geometry • Int.
2N3460 - N-Channel FET
(Central Semiconductor)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
.
2N3460 - n-channel JFET
(Siliconix)
n-channel JFETs
designed for • • •
• Small-Signal Low Noise Amplifiers
H
Performance Curves NP See Section 4
BENEFITS
• Operates from High Supply Vol.
2N3467 - PNP Transistor
(Semicoa Semiconductor)
Data Sheet No. 2N3467
Type 2N3467
Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV
Features: • • • • General-purpose transistor for switching and .
2N3467 - Bipolar PNP Device
(Seme LAB)
2N3467
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0..
2N3467 - PNP TRANSISTORS
(Central Semiconductor)
2N3467 2N3468
SILICON PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3467 and 2N3468 are silicon PNP s.
2N3467 - SWITCHING TRANSISTOR
(Motorola)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation T.
2N3467 - PNP SILICON SWITCHING TRANSISTOR
(Microsemi Corporation)
TECHNICAL DATA
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/348 Devices 2N3467 2N3467L 2N3468 2N3468L Qualified Level JAN JANTX JANTXV.
2N3467L - PNP Transistor
(Semicoa Semiconductor)
Data Sheet No. 2N3467L
Type 2N3467L
Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV
Features: • • • • General-purpose transistor for switching an.
