2N4111
Seme LAB
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Bipolar npn device.
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2N4111 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum.
2N4112 - Bipolar NPN Device
(Seme LAB)
..
2N4112
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.1.
2N4112 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum.
2N4113 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum.
2N4113 - Bipolar NPN Device
(Seme LAB)
2N4113
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN .
2N4114 - Bipolar NPN Device
(Seme LAB)
2N4114
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
2N4114 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum.
2N4117 - N-Channel JFET General Purpose Amplifier
(Calogic LLC)
N-Channel JFET General Purpose Amplifier
CORPORATION
2N4117 – 2N4119 / 2N4117A – 2N4119A PN4117 – PN4119 / PN4117A – PN4119A / SST4117 – SST4119
PIN .
2N4117 - N-Channel JFET
(InterFET)
InterFET
Product Folder
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2N4117-8-9A
2N4117/A, 2N4118/A, 2N4119/A N-Channel JFET
Features
• InterFET N0001H Geometry .
2N4117 - JFET
(Motorola)
2N4117.A 2N4118.A 2N4119.A
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
Gate Current
Total Device Dissipation
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