2N4233A
Seme LAB
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Bipolar npn device.
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2N4233 - Bipolar NPN Device
(Seme LAB)
2N4233
Dimensions in mm (inches).
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
Bipolar NPN Device in a Herm.
2N4233 - Medium-power NPN silicon transistors
(Motorola)
2N4231 thru 2N4.233 (SILICON)
Medium-power NPN silicon transistors designed for driver circuits, switching, and amplifier applications.
CASE 80
(TO-.
2N4233A - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum.
2N4233A - POWER TRANSISTORS
(Mospec Semiconductor)
A
A
A
A
.
2N4231 - Bipolar NPN Device
(Seme LAB)
2N4231
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar NPN Device in a Hermetica.
2N4231 - Medium-power NPN silicon transistors
(Motorola)
2N4231 thru 2N4.233 (SILICON)
Medium-power NPN silicon transistors designed for driver circuits, switching, and amplifier applications.
CASE 80
(TO-.
2N4231 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum.
2N4231A - SILICON TRANSISTORS
(Central Semiconductor)
2N4231A 2N4232A 2N4233A NPN 2N6312 2N6313 2N6314 PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CE.
2N4232 - Bipolar NPN Device
(Seme LAB)
2N4232
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar NPN Device in a Hermetica.
2N4232 - Medium-power NPN silicon transistors
(Motorola)
2N4231 thru 2N4.233 (SILICON)
Medium-power NPN silicon transistors designed for driver circuits, switching, and amplifier applications.
CASE 80
(TO-.
