2N4899X
Seme LAB
14.78kb
Pnp epitaxial base medium power transistor.
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2N4899 - Silicon PNP Power Transistors
(Inchange Semiconductor)
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N4898 2N4899 2N4900
DESCRIPTION With TO-66 package
Low collector saturat.
2N4899 - POWER TRANSISTORS
(Mospec Semiconductor)
A
A
A
A
.
2N4899 - Medium-power PNP silicon transistors
(Motorola)
2N4898 thru 2N4900 (SILICON)
~~ CASE 80
CdP
(TO·66)
Medium-power PNP silicon transistors designed for driver circuits, switching, and amplifier ap.
2N489 - SILICON UNIJUNCTION TRANSISTORS
(Digitron)
2N489(A,B)-2N494(A,B)
High-reliability discrete products and engineering services since 1977
SILICON UNIJUNCTION TRANSISTORS
FEATURES Available a.
2N4890 - Small Signal Transistors
(Central Semiconductor Corp)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ (µA) *ICEO **ICES ***ICEV ****ICER MIN 5..
2N4890 - GENERAL PURPOSE TRANSISTOR
(Motorola)
2N4453
For Specifications, See 2N869A Data.
2N4890
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Co.
2N4895 - Bipolar NPN Device
(Seme LAB)
2N4895
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package..
2N4895 - Small Signal Transistors
(Central Semiconductor Corp)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ (µA) *ICEO **ICES ***ICEV ****ICER MIN 5..
2N4896 - Bipolar NPN Device
(Seme LAB)
2N4896
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package..
2N4896 - Small Signal Transistors
(Central Semiconductor Corp)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ (µA) *ICEO **ICES ***ICEV ****ICER MIN 5..
