2N5929
Seme LAB
10.30kb
Bipolar npn device.
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N5929
DESCRIPTION ·DC Current Gain-
: hFE= 20-100@IC= 10A ·Low C.
2N5900 - GERMANIUM PNP POWER TRANSISTORS
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2N5887 thru 2N590 1 (GERMANIUM)
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· .. designed for low frequency switching and amplifier applications requiring to 7.0.
2N5901 - GERMANIUM PNP POWER TRANSISTORS
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GERMANIUM PNP POWER TRANSISTORS
· .. designed for low frequency switching and amplifier applications requiring to 7.0.
2N5902 - MONOLITHIC DUAL N-CHANNEL JFET
(Intersil Corporation)
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matched dual n-channel JFETs designed for • • •
• Differential Amplifiers • High Input
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ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-to-Ga.
2N5902 - N-Channel Monolithic Dual JFET
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Process 84
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CM
oCO
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z10
CM
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z10
CM
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0) lO
z
CM
oIO
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zlO
CM
o•
2N5903 - monolithic dual n-channel JFET
(Intersil Corporation)
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2N5903 - dual n-channel JFET
(Siliconix)
matched dual n-channel JFETs designed for • • •
• Differential Amplifiers • High Input
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ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-to-Ga.