2N6660
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
- VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω
- Fast Switching
- Low Threshold Voltage (Logic Level)
- Low CISS
- Integral Source-Drain Body Diode
- Hermetic Metal TO39 Package
- High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS Drain
- Source Voltage
60V
VGS Gate
- Source Voltage
±20V
Continuous Drain Current
TC = 25°C
1.0A
IDM Pulsed Drain Current (1)
3.0A
Total Power Dissipation at
TC ≤ 25°C
5W
De-rate TC > 25°C
40m W/°C
Total Power Dissipation at
TA ≤ 25°C
725m W
De-rate TA > 25°C
5.8m W/°C
TJ Operating Temperature Range
-65 to +150°C
Tstg Storage Temperature Range
-65 to +150°C
THERMAL PROPERTIES
Symbols Parameters
RθJC...
