* LF Large Signal Power Amplification
* Medium Current Switching 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) TO66 Package. Pin 1
* Base Pin 2
* Emitter Case - Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO
BDX14AA
Seme LAB
15.07 KB
Pnp silicon transistor.
BDX14AA
MECHANICAL DATA Dimensions in mm
PNP SILICON TRANSISTOR, EPITAXIAL BASE
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86.
📁 Related Datasheet
BDX14A - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
BDX14A
DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -55V(M.
BDX14A - PNP Epitaxial Silicon Bipolar Transistor
(TT)
PNP Epitaxial Silicon Bipolar Transistor
BDX14A
Hermetic TO-66 Metal Package Ideal For General Purpose Low Frequency Switching Applications High Relia.
BDX14 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
BDX14
DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -55V(Mi.
BDX10 - Bipolar NPN Device
(Seme LAB)
..
BDX10
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15.
BDX11 - Bipolar NPN Device
(Seme LAB)
BDX11
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .
BDX11 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BDX11
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V (Min) ·High Current.
BDX12 - Bipolar NPN Device
(Seme LAB)
BDX12
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .
BDX12 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BDX12
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min) ·Excellent Sa.
