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BDX13 - NPN Transistor

BDX13 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX13 .
Excellent Safe Operating Area. DC Current Gain-hFE=15-60@IC = 8A. Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

BDX13 Applications

* Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base C

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Datasheet Details

Part number
BDX13
Manufacturer
INCHANGE
File Size
190.93 KB
Datasheet
BDX13-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BDX13-like datasheet