Datasheet4U Logo Datasheet4U.com

BDX13 - NPN Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – BDX13

Datasheet Details

Part number BDX13
Manufacturer INCHANGE
File Size 190.93 KB
Description NPN Transistor
Datasheet download datasheet BDX13 Datasheet
Additional preview pages of the BDX13 datasheet.

Product details

Description

Excellent Safe Operating Area DC Current Gain-hFE=15-60@IC = 8A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 4A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO

📁 Similar Datasheet

  • BDX10 - Bipolar NPN Device (Seme LAB)
  • BDX11 - Bipolar NPN Device (Seme LAB)
  • BDX12 - Bipolar NPN Device (Seme LAB)
  • BDX14A - Silicon PNP Power Transistor (Inchange Semiconductor)
  • BDX14AA - PNP Silicon Transistor (Seme LAB)
  • BDX16A - Bipolar PNP Device (Seme LAB)
  • BDX18 - SILICON POWER TRANSISTOR (SavantIC)
  • BDX18N - PNP Silicon Transistor (Comset Semiconductors)
Other Datasheets by INCHANGE
Published: |