BDX33B NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor BDX33B .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min). High DC Current Gain : hFE= 750(Min) @IC= 3A. Low Collector Saturation Volta.

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Datasheet Specifications

Part number: BDX33B
Manufacturer: INCHANGE
File Size: 210.15 KB
Datasheet: BDX33B-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A

BDX33B Distributors

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BDX33B NPN Transistor INCHANGE

INCHANGE BDX33B-like datasheet