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BDX11 - NPN Transistor

BDX11 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX11 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min). High Current Capability. Wide area of safe operation. 100% avalanche tes.

BDX11 Applications

* Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 160 V 140 V 7 V IC Collector Current-Continuous 10 A I

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Datasheet Details

Part number
BDX11
Manufacturer
INCHANGE
File Size
174.41 KB
Datasheet
BDX11-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BDX11-like datasheet

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