BDX11 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX11 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min). High Current Capability. Wide area of safe operation. 100% avalanche tes.

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Datasheet Specifications

Part number: BDX11
Manufacturer: INCHANGE
File Size: 174.41 KB
Datasheet: BDX11-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 160 V 140 V 7 V IC Collector Current-Continuous 10 A I

BDX11 Distributors

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BDX11 NPN Transistor INCHANGE

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