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BDX12 - NPN Transistor

BDX12 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX12 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min). Excellent Safe Operating Area. Low Collector-Emitter Saturation Voltage.

BDX12 Applications

* Designed for application in industrial and commercial equipment including high fidelity audio amplifier,series and shunt regulators and power switches ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO VEBO IC PC TJ Tstg Collector-Emit

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Datasheet Details

Part number
BDX12
Manufacturer
INCHANGE
File Size
176.64 KB
Datasheet
BDX12-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BDX12-like datasheet

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