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BDX12 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested

and reliable operation.

Designed for applic

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Datasheet preview – BDX12

Datasheet Details

Part number BDX12
Manufacturer INCHANGE
File Size 176.64 KB
Description NPN Transistor
Datasheet download datasheet BDX12 Datasheet
Additional preview pages of the BDX12 datasheet.

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Full PDF Text Transcription

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX12 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
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