Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
High DC Current Gain
: hFE= 750(Min) @IC= 4A
Low Collector Saturation Voltage
: VCE(sat)= 2.5V(Max.)@ IC= 4A
Complement to Type BDX34A
Minimum Lot-to-Lot variations for robust device
performance and reliable operati
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Darlington Power Transistor
BDX33A
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= 4A ·Low Collector Saturation Voltage
: VCE(sat)= 2.5V(Max.)@ IC= 4A ·Complement to Type BDX34A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.
BDX33A Datasheet
