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BDX33A
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BDX33/A/B/C
BDX33/A/B/C
Power Linear and Switching Applications
• High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C VCEO Collector-Emitter Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 10 15 0.25 70 150 - 65 ~ 150 V V V V V V V V A A A W °C °C Value Units
IC ICP IB PC TJ TSTG
©2000 Fairchild Semiconductor International
Rev.
BDX33A Datasheet
