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BDX33B Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlington Power Transistor BDX33B.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage : VCE(sat)= 2.5V(Max.)@ IC= 3A ·Complement to Type BDX34B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.25 A 70 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website: www.iscsemi.com MAX UNIT 1.78 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;

BDX33B Distributor