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BDX33B - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) High DC Current Gain : hFE= 750(Min) @IC= 3A Low Collector Saturation Voltage : VCE(sat)= 2.5V(Max.)@ IC= 3A Complement to Type BDX34B Minimum Lot-to-Lot variations for robust device performance and reliable operati

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isc Silicon NPN Darlington Power Transistor BDX33B DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage : VCE(sat)= 2.5V(Max.)@ IC= 3A ·Complement to Type BDX34B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.